METHOD FOR PRODUCING SiC SINGLE CRYSTAL

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United States of America Patent

APP PUB NO 20160273126A1
SERIAL NO

15029379

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Abstract

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Provided is a method for producing a SiC single crystal by a solution growth method, the production method being capable of growing a SiC single crystal doped with Al even when a graphite crucible is used. The production method according to an embodiment of the present invention includes the steps of: forming a Si—C solution in a graphite crucible, and bringing a SiC seed crystal into contact with the Si—C solution and growing the SiC single crystal on the SiC seed crystal. The Si—C solution contains Si, Al, and Cu in a range satisfying Formula (1), with the balance of the Si—C solution being C and impurities. In Formula (1), [Si], [Al], and [Cu] represent contents of Si, Al and Cu expressed by mol %, respectively.

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Patent Owner(s)

Patent OwnerAddress
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kamei, Kazuhito Kitakyushu-shi, Fukuoka, JP 38 152
Kusunoki, Kazuhiko Nishinomiya-shi, Hyogo, JP 39 97

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