METHOD FOR PRODUCING SiC SINGLE CRYSTAL
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United States of America Patent
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Sep 22, 2016
app pub date -
Nov 12, 2014
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Nov 12, 2014
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Abstract
Provided is a method for producing a SiC single crystal by a solution growth method, the production method being capable of growing a SiC single crystal doped with Al even when a graphite crucible is used. The production method according to an embodiment of the present invention includes the steps of: forming a Si—C solution in a graphite crucible, and bringing a SiC seed crystal into contact with the Si—C solution and growing the SiC single crystal on the SiC seed crystal. The Si—C solution contains Si, Al, and Cu in a range satisfying Formula (1), with the balance of the Si—C solution being C and impurities. In Formula (1), [Si], [Al], and [Cu] represent contents of Si, Al and Cu expressed by mol %, respectively.
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