Ion-ion plasma atomic layer etch process and reactor

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United States of America Patent

PATENT NO 10475626
APP PUB NO 20160276134A1
SERIAL NO

14660531

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Abstract

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A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Carducci, James D Sunnyvale, US 109 3529
Collins, Kenneth S San Jose, US 308 24969
Dorf, Leonid San Jose, US 71 1239
Ramaswamy, Kartik San Jose, US 347 17170
Rauf, Shahid Pleasanton, US 149 4840
Yang, Yang Los Gatos, US 1084 7350

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