Silicon Nitride Film Forming Method and Silicon Nitride Film Forming Apparatus
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United States of America Patent
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Issued Date -
Sep 22, 2016
app pub date -
Mar 10, 2016
filing date -
Mar 20, 2015
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Abandoned
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Abstract
A silicon nitride film forming method includes accommodating a workpiece within a reaction chamber, forming a silicon nitride film on the workpiece accommodated within the reaction chamber, carbon-terminating a surface of the silicon nitride film by supplying a hydrocarbon compound having an unsaturated bond into the reaction chamber accommodating the workpiece on which the silicon nitride film is formed, and unloading the workpiece, on which the silicon nitride film having a carbon-terminated surface is formed, out of the reaction chamber.
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