Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
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United States of America Patent
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May 29, 2018
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May 31, 2016
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Feb 25, 2015
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Abstract
A semiconductor material stack of, from bottom to top, a first semiconductor material having a first lattice constant and a second semiconductor material having a second lattice constant that may or may not differ from the first lattice constant and is selected from an III-V compound semiconductor and germanium is provided. The second semiconductor material of the semiconductor material stack is then scanned using an atomic force microscope (AFM) operating in a tapping mode to provide an AFM image of the second semiconductor material of the semiconductor material stack. The resultant AFM image is then analyzed and crystal defects at a topmost surface of the second semiconductor material of the semiconductor material stack can be measured.
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