SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160276291A1
SERIAL NO

14844356

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Abstract

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According to one embodiment, a semiconductor device includes: a semiconductor substrate; and an insulating film provided above the semiconductor substrate. The insulating film includes: a plurality of first particles having a periodic structure; a plurality of second particles provided between the plurality of first particles and having an average particle outline size smaller than an average particle outline size of the plurality of first particles; and a filler provided between at least one of the plurality of first particles and the plurality of second particles.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA MEMORY CORPORATION1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NAKAZAWA, Keisuke Yokkaichi, JP 39 244

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