FinFET including tunable fin height and tunable fin width ratio
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United States of America Patent
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Apr 30, 2019
Grant Date -
Sep 22, 2016
app pub date -
May 31, 2016
filing date -
Apr 7, 2014
priority date (Note) -
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Abstract
A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.
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