Solid-state imaging device and manufacturing method thereof
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United States of America Patent
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Nov 14, 2017
Grant Date -
Sep 22, 2016
app pub date -
Mar 15, 2016
filing date -
Mar 19, 2015
priority date (Note) -
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Abstract
A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P+-type pinning layer that is located in the P-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a P−-type impurity region that is located in the P-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an N−-type impurity region that is located in the P-well so as to extend under the pinning layer and the P−-type impurity region and be in contact with the P−-type impurity region and the gate insulating film, and an N+-type impurity region that is located in the P-well and includes a portion that is under a second end portion of the gate electrode.
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