SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
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United States of America Patent
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Issued Date -
Sep 22, 2016
app pub date -
Sep 3, 2015
filing date -
Sep 3, 2015
priority date (Note) -
Abandoned
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Abstract
A solid-state imaging device according to an embodiment includes a first semiconductor layer of a first conductivity type, a photodiode region in which a second semiconductor layer of a second conductivity type is formed in a surface of the first semiconductor layer, a first interlayer insulating film which is formed on the first semiconductor layer and on the photodiode region, a first fixed charge film which is formed on the first interlayer insulating film and has a charge of the second conductivity type, a second interlayer insulating film which is formed on or above the first fixed charge film, and a second fixed charge film which is formed on the second interlayer insulating film and has a charge of the second conductivity type.
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