Method of fabricating semiconductor structures on dissimilar substrates
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United States of America Patent
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Jul 4, 2017
Grant Date -
Sep 22, 2016
app pub date -
Dec 23, 2013
filing date -
Dec 23, 2013
priority date (Note) -
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Abstract
Techniques are disclosed for forming a defect-free semiconductor structure on a dissimilar substrate with a multi-aspect ratio mask. The multi-aspect ratio mask comprises a first, second, and third layer formed on a substrate. The second layer has a second opening wider than a first opening and a third opening in the first and third layers, respectively. All three openings are centered along a common central axis. A semiconductor material is grown from the top surface of the substrate and laterally onto the top surface of the first layer within the second opening. The semiconductor material disposed within and vertically below the third opening is etched by using the third layer as an etch mask so that the remaining material that laterally overflowed onto the top surface of the first layer forms a remaining structure.
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