Importance

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Abstract

A semiconductor device includes an SiC substrate including a first surface and a second surface, the SiC substrate having a first SiC region of a first conductivity type at the first surface, and a second SiC region of a second conductivity type between the first SiC region and the second surface, an insulating film on the first surface around an element region of the semiconductor device and in contact with the first SiC region, a first electrode on the insulating film and comprising a contact electrically connected to the first SiC region, and a second electrode in contact with the second surface. A first conductivity type impurity concentration of the first SiC region that is directly under a center portion of the contact is greater than a first conductivity type impurity concentration of the first SiC region that is directly under a peripheral portion of the contact.

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First Claim