Importance

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Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a first electrode, a first insulating layer, and a second electrode. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the first semiconductor region in the first region. The third semiconductor region is provided on the first semiconductor region in the second region. The first electrode is provided on the third semiconductor region. The first electrode is electrically connected to the third semiconductor region. The first insulating layer is provided on the first electrode. The second electrode is provided on the second semiconductor region. A portion of the second electrode is positioned on the first insulating layer.

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First Claim