VAPOR FLOW CONTROL APPARATUS FOR ATOMIC LAYER DEPOSITION
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United States of America Patent
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Jun 8, 2016
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Dec 27, 2011
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Abstract
A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.
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