Fin trimming in a double sit process

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United States of America Patent

PATENT NO 9601345
APP PUB NO 20160284558A1
SERIAL NO

14670494

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Abstract

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A semiconductor structure and the method of forming that semiconductor structure. The method includes formation of a plurality of fins from a layer of semiconductor material. At least one fin of the plurality of fins is at least fifty percent wider than each of a group of fins included in the plurality of fins. The method also includes selectively removing the one fin such that only the group of fins remain.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Colburn, Matthew E Schenectady, US 197 3174
Doris, Bruce B Slingerlands, US 796 13250
Khakifirooz, Ali Los Altos, US 842 11906

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