Pattern forming method

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United States of America Patent

PATENT NO 9659816
SERIAL NO

15065129

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Abstract

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A pattern forming method in an embodiment includes forming, on or above a substrate, a block copolymer layer containing a first polymer and a second polymer having lower surface energy than the first polymer, heat treating the block copolymer layer to separate the block copolymer layer into a first phase containing the first polymer and a second phase containing the second polymer, and using an atomic layer deposition process, selectively forming a metal layer on the first phase and selectively removing the second phase.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asakawa, Koji Kawasaki, JP 222 4320
Hieno, Atsushi Yokohama, JP 13 126

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