Trench to trench fin short mitigation
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United States of America Patent
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Nov 29, 2016
Grant Date -
Sep 29, 2016
app pub date -
Mar 25, 2015
filing date -
Mar 25, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor structure includes a replacement strap for a finFET fin that provides communication between a storage capacitor and the fin. The storage capacitor is located in a deep trench formed in a substrate and the fin is formed on a surface of the substrate. The replacement strap allows for electrical connection of the fin to the storage capacitor and is in direct physical communication with the fin and the storage capacitor. The replacement strap may be formed by removing a sacrificial strap and merging epitaxially grown material from the fin and epitaxially grown material from the capacitor. The epitaxially grown material grown from the fin grows at a slower rate relative to the epitaxially grown material grown from the capacitor. By removing the sacrificial strap prior to forming the replacement strap, epitaxial overgrowth that may cause shorts between adjacent capacitors is limited.
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