Adjacent strained <100> NFET fins and <110> PFET fins
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 28, 2017
Issued Date -
N/A
app pub date -
Mar 23, 2015
filing date -
Mar 23, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates generally to semiconductor devices, and more particularly, to a structure and method of forming strained <100> n-channel field effect transistor (NFET) fins and adjacent strained <110> p-channel field effect transistor (PFET) fins on the same substrate. A <110> crystalline oxide layer may be either bonded or epitaxially grown on a substrate layer. A first SOI layer with a <100> crystallographic orientation and tensile strain may be bonded to the crystalline oxide layer. A second SOI layer with a <110> crystallographic orientation and compressive strain may be epitaxially grown on the crystalline oxide layer. The first SOI layer may be used to form the fins of a NFET device. The second SOI layer may be used to form the fins of a PFET device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully