Importance

Loading Importance Indicators...

Abstract

Provided is a Schottky diode including a substrate, a drift layer on the substrate, the drift layer comprising an active region and a periphery positioned at an edge of the active region, a junction termination layer on a boundary between the active region and the periphery, a first metal layer configured to cover a part of the active region and a part of the junction termination layer, and a second metal layer configured to cover the first metal layer and the active region, wherein the first metal layer and the second metal layer contact the drift layer to provide a Schottky junction, and the first metal layer has a higher Schottky barrier height than the second metal layer.

Loading the Abstract Image...

First Claim