HIGH PURITY INDIUM AND MANUFACTURING METHOD THEREFOR
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United States of America Patent
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Oct 6, 2016
app pub date -
Sep 2, 2014
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Sep 2, 2014
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Provided is high purity Indium having a purity of 7N (99.99999%) or higher, and containing 0.05 ppm or less of Pb, 0.005 ppm or less of Zn, and 0.02 ppm or less of S. A method of producing high purity In, wherein SrCO3 is added to an electrolyte upon performing electrolytic refining using 5N (99.999%) In to reduce Pb, Zn and S to attain a purity of 7N (99.99999%) or higher. Under circumstances where In demands for LED, such as InGaN and AlInGaP, are anticipated, it is necessary to produce indium in mass quantities and inexpensively, and the present invention provides technology capable of achieving the same.
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