Semiconductor memory device including variable resistance element
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Mar 9, 2016
filing date -
Mar 30, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to one embodiment, a semiconductor memory device includes a memory cell including a variable resistance element, a first circuit including a first resistance element and a first transistor, a first bit line, a second transistor, and a sense circuit. The memory cell and the first circuit are connected to the first bit line. One end and the other end of the second transistor are connected to the first bit line and the sense circuit respectively. During a first operation before reading data of the memory cell a voltage of the first bit line falls to a first voltage and the first and second transistors are turned off in response to a fall of the voltage of the first bit line to the first voltage.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully