SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM

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United States of America Patent

APP PUB NO 20160293460A1
SERIAL NO

14858385

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Abstract

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A substrate processing apparatus includes a reception part configured to receive film thickness distribution data of a substrate on which a channel region, an insulating film on the channel region, and a first silicon-containing layer as a portion of a silicon-containing film on the insulating film are formed; a substrate mounting part configured to mount the substrate; and a gas supply part configured to supply a gas to form a second silicon-containing layer as a portion of the silicon-containing film on the first silicon-containing layer to have a film thickness distribution different from a film thickness distribution of the film thickness distribution data, thereby correcting a film thickness of the silicon-containing film.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INC15-12 NISHI-SHIMBASHI 2-CHOME MINATO-KU TOKYO 105-8039

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIKUCHI, Toshiyuki Toyama-shi, JP 82 514
OHASHI, Naofumi Toyama-shi, JP 148 697
TAKANO, Satoshi Toyama-shi, JP 153 1980

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