SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20160293695A1
SERIAL NO

14391889

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Abstract

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The present disclosure provides a semiconductor device, comprising: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an hollow cavity below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer. Such a device structure of the present disclosure incorporate the respective advantages of the bulk silicon device and the SOI device, and has characteristics of lower cost, smaller leakage current, lower power consumption, fast speed, simple process and high integration level. Meanwhile, the floating body effect and the spontaneous heating effect are eliminated as compared with the SOI device. Furthermore, the lower dielectric constant in the hollow cavity results in that it may withstand a higher voltage.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Bangming Beijing, CN 3 9
Li, Chunlong Beijing, CN 18 50
Tang, Bo Beijing, CN 33 90
Tang, Zhaoyun Beijing, CN 5 7
Wang, Hongli Beijing, CN 19 35
Xu, Jing Beijing, CN 227 1679
Xu, Yefeng Beijing, CN 2 5
Yan, Jiang Beijing, CN 60 763
Yang, Mengmeng Beijing, CN 3 5

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