Hybrid aspect ratio trapping

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United States of America Patent

PATENT NO 9608067
SERIAL NO

14672311

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Abstract

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A semiconductor structure includes a material stack located on a surface of a semiconductor substrate. The material stack includes, from bottom to top, a silicon germanium alloy portion that is substantially relaxed and defect-free and a semiconductor material pillar that is defect-free. A dielectric material structure surrounds sidewalls of the material stack and is present on exposed portions of the semiconductor substrate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29582
Divakaruni, Ramachandra Ossining, US 277 5658
He, Hong Schenectady, US 1175 7723
Li, Juntao Cohoes, US 577 3094

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