Substrate For Molecular Beam Epitaxy (MBE) HGCDTE Growth
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United States of America Patent
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app pub date -
Jun 17, 2016
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May 7, 2014
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Abstract
A semiconductor structure having a first semiconductor body having an upper surface with a non <211> crystallographic orientation and a second semiconductor body having a surface with a <211> crystallographic orientation, the surface of the second semiconductor body being bonded to a bottom surface of the first semiconductor body. A layer comprising CdTe is epitaxially disposed on the upper surface of the second semiconductor body. The second semiconductor body is CZ silicon, has a thickness less than 10 microns and has a diameter of at least eight inches. A getter having micro-cavities has a bottom surface formed on an upper surface of the first semiconductor body and has an upper surface bonded to a bottom surface of the second semiconductor body.
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