FinFET devices with multiple channel lengths

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9496399
APP PUB NO 20160293748A1
SERIAL NO

14676850

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Abstract

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A method including patterning a continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle relative to the second line segment, and forming a first gate and a second gate substantially parallel to each other, the first gate substantially covering sides and a top of a portion of the first segment of the continuous fin, the second gate substantially covering sides and a top of a portion of the second segment of the continuous fin.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leobandung, Effendi Stormville, US 536 4748
Yamashita, Tenko Schenectady, US 599 4947

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