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Abstract

A method of forming features in a low-k dielectric layer on a patterned substrate is described. A via, trench or a dual damascene structure may be formed in the low-k dielectric layer. Patterning the low-k dielectric layer may also increase the dielectric constant. The patterned substrate is processed by shining UV-light on the low-k dielectric layer while exposing the low-k dielectric layer to a carbon-and-hydrogen-containing precursor to restore or lower the dielectric constant. Then, a conformal hermetic layer is formed on the low-k dielectric layer. The conformal hermetic layer is configured to keep water and contaminants out of the low-k dielectric layer during later processing and during the lifespan of the completed device.

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First Claim