Double-sided semiconductor package and dual-mold method of making same
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United States of America Patent
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Feb 13, 2018
Issued Date -
N/A
app pub date -
Apr 1, 2016
filing date -
Apr 9, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device comprises a first conductive layer formed on a carrier over an insulating layer. A portion of the insulating layer is removed prior to forming the first conductive layer. A first semiconductor die is disposed over the first conductive layer. A discrete electrical component is disposed over the first conductive layer adjacent to the first semiconductor die. A first encapsulant is deposited over the first conductive layer and first semiconductor layer. A conductive pillar is formed through the first encapsulant between the first conductive layer and second conductive layer. A second encapsulant is deposited around the first encapsulant, first conductive layer, and first semiconductor die. A second conductive layer is formed over the first semiconductor die, first encapsulant, and second encapsulant opposite the first conductive layer. The carrier is removed after forming the second conductive layer. A semiconductor package is mounted to the first conductive layer.
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