Edge termination for semiconductor devices and corresponding fabrication method

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United States of America Patent

PATENT NO 9859360
SERIAL NO

15184261

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Abstract

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A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.

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Patent Owner(s)

  • ABB SCHWEIZ AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Antoniou, Marina Cambridge, GB 3 6
Corvasce, Chiara Bergdietikon, CH 22 67
Nistor, Iulian Niederweningen, CH 23 123
Rahimo, Munaf Uezwil, CH 76 226
Udrea, Florin Cambridge, GB 120 1235

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