Semiconductor memory device

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United States of America Patent

PATENT NO 9613713
APP PUB NO 20160307638A1
SERIAL NO

15195560

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Abstract

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According to one embodiment, a semiconductor memory device includes: first and second memory cells; first and second word lines coupled to the first and second memory cells, respectively. When data is read from the first memory cell, first and second voltages are applied to the first word line. A voltage of the second word line varies continuously by a first potential difference with time while the first voltage is applied to the first word line, and the voltage of the first word line varies continuously by a second potential difference with time while the second voltage is applied to the first word line.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Futatsuyama, Takuya Yokohama, JP 132 1845
Hosono, Koji Fujisawa, JP 160 3276
Shirakawa, Masanobu Chigasaki, JP 261 1670

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