Method for Manufacturing a Semiconductor Substrate

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United States of America Patent

SERIAL NO

15189091

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Abstract

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A method for manufacturing a semiconductor substrate includes providing a first wafer having a first surface and a second surface opposite the first surface, forming cavities in the first wafer at a first distance from the first surface, wherein the cavities, when seen in a cross-section perpendicular to the first surface, are laterally spaced from each other by partition walls formed by the semiconductor material of the first wafer, the cavities forming a separation region, bonding a second wafer on the first surface of the first wafer, breaking the partition walls by applying mechanical impact to the partition walls to split the first wafer along the separation region so that a residual wafer remains attached to the second wafer, and depositing an epitaxial layer on the residual wafer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Schulze, Hans-Joachim Taufkirchen, DE 599 2437
Werner, Wolfgang Munich, DE 166 2897

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