SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Oct 20, 2016
app pub date -
Feb 24, 2016
filing date -
Feb 24, 2016
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Abstract
The invention provides a semiconductor device including a substrate, a first dielectric layer, a conductive layer, a ferroelectric material layer, and a charge-trapping layer. The first dielectric layer is disposed on the substrate. The conductive layer is disposed on the first dielectric layer. The ferroelectric material layer and the charge-trapping layer are disposed between the first dielectric layer and the conductive layer by stacking. The semiconductor device of the invention has better memory characteristics and transistor characteristics.
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