APPARATUS FOR PRODUCING SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SIC EPITAXIAL WAFER
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United States of America Patent
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Oct 27, 2016
app pub date -
Oct 30, 2014
filing date -
Dec 24, 2013
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Abstract
The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.
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