Symmetric plasma process chamber
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United States of America Patent
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Oct 22, 2019
Grant Date -
Oct 27, 2016
app pub date -
Jun 30, 2016
filing date -
Oct 5, 2011
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Abstract
Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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