SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

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United States of America Patent

APP PUB NO 20160322219A1
SERIAL NO

15108343

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Abstract

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A semiconductor substrate including plural types of semiconductor layers exposed at a surface thereof is provided. A semiconductor substrate includes: a supporting substrate; a single-crystal, first semiconductor layer disposed on a surface of the supporting substrate; a single-crystal, second semiconductor layer disposed on parts of a surface of the first semiconductor layer; and a single-crystal, third semiconductor layer disposed on those parts of the surface of the first semiconductor layer on which the second semiconductor layer is not disposed. The third semiconductor layer has a crystal orientation aligned with that of the first semiconductor layer and is made of the same material as the first semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI2-1 TOYODA-CHO KARIYA-SHI AICHI-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IMAOKA, Ko Kariya-shi, JP 7 31
SUDA, Jun Otsu-shi, JP 12 147
UCHIDA, Hidetsugu Tokyo, JP 19 152

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