Importance

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Abstract

A method of manufacturing a fin field effect transistor is provided. A double spacer protective layer comprising an outer spacer (the first spacer) and an inner spacer (the second spacer) is formed on both sides of the gate, and the thickness of the outer spacer can be adjusted to accurately control the distance between the source/drain ion implantation area and the channel, so as to solve the problem of the hot carrier injection effect caused by the distance being too close between the channel and the source/drain area; in addition, the outer spacers and the inner spacers can be formed by only two film deposition and etching processes without adding a photolithography mask, which can effectively prevent the contact between the gate and the source/drain, so as to substantially reduce the parasitic capacitance.

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First Claim