Method of modeling the temperature profile of an IC transistor junction
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United States of America Patent
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Sep 26, 2017
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Nov 17, 2015
filing date -
Nov 17, 2014
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Abstract
A method of modeling the temperature profile of an IC transistor junction employs an efficient thermal simulation algorithm to implement a design tool for IC design applications. The junction area of a transistor is divided into an odd number of sub-sections of equal size. Each sub-section is modeled as an equivalent circular heat source having an area equal to that of a sub-section. Temperature profiles are determined for each of the equivalent circular heat sources, which are superimposed to provide a total thermal profile for the junction. The method is preferably employed with rectangular-shaped junction areas, and performed with a software-controlled microprocessor. The method may be integrated with an electronic circuit simulation program such as SPICE. The results of the modeling may be used to iteratively modify the component layout on an IC to improve its temperature performance and/or its component density.
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