Semiconductor Device Having Gold Metallization Structures

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United States of America Patent

SERIAL NO

15220161

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A semiconductor device includes a semiconductor substrate having first and second terminals of one or more semiconductor devices, first and second barrier metal regions electrically connected to the first and second terminals, respectively, and first and second gold metallization structures electrically connected to the first and second terminals via the first and second barrier metal regions, respectively. The first and second gold metallization structures contain diffused copper atoms. Interfaces between the first and second barrier metals and the first and second gold metallization structures, respectively, are substantially devoid of metallic copper.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG9500 VILLACH

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Inventor Name Address # of filed Patents Total Citations
Zechmann, Arno Villach, AT 8 10

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