Semiconductor memory device
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United States of America Patent
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Apr 11, 2017
Grant Date -
Nov 17, 2016
app pub date -
Aug 6, 2015
filing date -
May 13, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor memory device includes a semiconductor pillar extending in a first direction in a first region. The semiconductor memory device also includes a first electrode film provided on a side of the semiconductor pillar and extending in a second direction different from the first direction in the first region and in a second region adjacent to the first region in the second direction. The semiconductor memory device also includes a second electrode film provided between the semiconductor pillar and the first electrode film in the first region. Film thickness in the first direction of the first electrode film in the first region is smaller than film thickness in the first direction of the first electrode film in the second region.
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