Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same
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United States of America Patent
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Jun 4, 2019
Grant Date -
Nov 17, 2016
app pub date -
Jul 27, 2016
filing date -
Apr 29, 2014
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Abstract
Multiple threshold voltage devices on hybrid oriented substrates, and methods of manufacturing same are disclosed. A method for manufacturing a semiconductor device comprises performing a single epitaxy step on a hybrid orientation substrate including a first region having a first crystallographic orientation and a second region having a second crystallographic orientation different from the first crystallographic orientation, wherein the single epitaxy step forms a first layer disposed on the first region and a second layer disposed on the second region, the first layer has the first crystallographic orientation and a first composition, and the second layer has the second crystal orientation and a second composition different from the first composition.
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