Self-aligned source and drain regions for semiconductor devices

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United States of America Patent

PATENT NO 9673290
SERIAL NO

15223988

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Abstract

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A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
de, Souza Joel P Putnam Valley, US 154 1022
Hekmatshoartabari, Bahman White Plains, US 389 1813
Kim, Jeehwan Los Angeles, US 247 1233
Maurer, Siegfried L Stormville, US 13 125
Sadana, Devendra K Pleasantville, US 897 9950

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