Armature-clad MRAM device

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United States of America Patent

PATENT NO 9614146
SERIAL NO

15222547

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Abstract

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A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.

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Patent Owner(s)

  • CROCUS TECHNOLOGY SA;INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Annunziata, Anthony J Stamford, US 108 447
Gapihan, Erwan White Plains, US 10 780

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