Metallized junction FinFET structures

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United States of America Patent

PATENT NO 9634028
SERIAL NO

14929307

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Abstract

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FinFET devices are provided wherein the current path is minimized and mostly limited to spacer regions before the channel carriers reach the metal contacts. The fins in the source/drain regions are metallized to increase the contact area and reduce contact resistance.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doris, Bruce B Slingerlands, US 796 13219
Kerber, Pranita Mount Kisco, US 101 710
Reznicek, Alexander Troy, US 1406 11120
Rubin, Joshua M Albany, US 75 399

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