Metallized junction FinFET structures
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United States of America Patent
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Apr 18, 2017
Issued Date -
N/A
app pub date -
May 21, 2015
filing date -
May 21, 2015
priority date (Note) -
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Abstract
FinFET devices are provided wherein the current path is minimized and mostly limited to spacer regions before the channel carriers reach the metal contacts. The fins in the source/drain regions are metallized to increase the contact area and reduce contact resistance. Selective removal of semiconductor fins in the source/drain regions following source/drain epitaxy facilitates replacement thereof by the metallized fins. A spacer formed subsequent to source/drain epitaxy prevents the etching of extension/channel regions during semiconductor fin removal.
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