Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same
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United States of America Patent
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Feb 20, 2018
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app pub date -
May 4, 2016
filing date -
May 19, 2015
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Abstract
A method for manufacturing a solid-state image pickup apparatus includes forming a first insulating film over a substrate after forming a gate electrode of a first transfer transistor and a gate electrode of a second transfer transistor, forming a second insulating film on the first insulating film, forming a first structure and a second structure on side surfaces of the gate electrodes of the first and second transfer transistors, respectively, via the first insulating film by etching the second insulating film in such a manner that the first insulating film remains on a semiconductor region of a photoelectric conversion unit and a semiconductor region of a charge holding unit, and forming a light shielding film that covers the gate electrode of the first transfer transistor, the semiconductor region of the charge holding unit, and the gate electrode of the second transfer transistor.
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