COMPOSITION AND METHOD FOR MAKING PICOCRYSTALLINE ARTIFICIAL CARBON ATOMS
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United States of America Patent
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Issued Date -
Dec 1, 2016
app pub date -
May 27, 2016
filing date -
May 28, 2015
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Abstract
Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of boron icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B12Hw)xSiyOz with 3≦w≦5, 2≦x≦3, 2≦y≦5 and 0
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