Importance

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Abstract

An ion beam etching apparatus includes: a processing chamber connected to the plasma generation chamber including an internal space; a plasma generating unit configured to generate plasma in the internal space; an extracting unit configured to extract ions from the plasma, from the internal space to the processing chamber, the extracting unit including first, second and a third electrodes, each of which has a plurality of ion passage holes; a first ring member provided closer to the plasma generation chamber; a second ring member provided closer to the processing chamber; a fixing member having one end and another end, the fixing member penetrating the first, second and third electrodes, and having the one end connected to the first ring member and the other end connected to the second ring member; and a heating unit configured to heat the third electrode from outside of the plasma generation chamber.

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First Claim