METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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N/A
Issued Date -
Dec 1, 2016
app pub date -
Sep 4, 2015
filing date -
May 28, 2015
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to one embodiment, a method of manufacturing a semiconductor device comprises forming a first insulating film and a wiring pattern and forming a second insulating film on the upper side of these. Further, a process of making holes in the second insulating film simultaneously at position where the wiring pattern is placed and position where the wiring pattern is not formed is performed. Thus, a first hole extending down to the wiring pattern and a second hole extending down to the first insulating film are formed. Then part of the first insulating film is removed through the second hole, and forming an air gap between a first portion and a second portion of the wiring pattern.
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