SEMICONDUCTOR STRUCTURE

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United States of America Patent

SERIAL NO

15232796

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Abstract

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A semiconductor process includes the following steps. A dielectric layer is formed on a substrate, where the dielectric layer has at least a dishing from a first top surface. A shrinkable layer is formed to cover the dielectric layer, where the shrinkable layer has a second top surface. A treatment process is performed to shrink a part of the shrinkable layer according to a topography of the second top surface, thereby flattening the second top surface. A semiconductor structure formed by said semiconductor process is also provided.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Po-Cheng Kaohsiung City, TW 64 273
Hung, I-Lun Kaohsiung City, TW 4 15
Hung, Tzu-Hsiang Kaohsiung City, TW 14 42
Li, Kun-Ju Tainan City, TW 47 67
Li, Yu-Ting Chiayi City, TW 35 161
Lin, Chih-Hsun Ping-Tung County, TW 74 275
Lin, Jen-Chieh Kaohsiung City, TW 52 110
Lin, Wen-Chin Tainan City, TW 74 861
Lu, Chun-Tsen Tainan City, TW 27 44
Sie, Wu-Sian Tainan City, TW 14 68

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