SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Dec 1, 2016
app pub date -
Aug 31, 2015
filing date -
May 25, 2015
priority date (Note) -
Abandoned
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Abstract
A semiconductor device according to an embodiment includes a semiconductor layer. A gate dielectric film is provided on the semiconductor layer. A gate electrode is provided on the semiconductor layer via the gate dielectric film. A first conductivity-type source layer is provided in the semiconductor layer on a side of one end of the gate electrode. A second conductivity-type drain layer is provided in the semiconductor layer on a side of the other end of the gate electrode. The drain layer does not face a bottom surface of the gate electrode. A first diffusion layer of the first conductivity-type is provided at least in a part of the semiconductor layer between a first portion of the semiconductor layer and the drain layer. The first portion faces the bottom surface of the gate electrode.
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