SEMICONDUCTOR PHOTODETECTOR

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United States of America Patent

APP PUB NO 20160351732A1
SERIAL NO

15110281

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A photodetector for the detection of a light beam, comprising:

    a metal layer acting as a ground plane,a semiconductor layer covering the metal layer, wherein the semiconductor layer is made of at least two different materials forming an heterostructure,an array of metal pads covering the semiconductor layer, collecting the light beam and directing it towards the semiconductor layer, each of the metal pads, together with the semiconductor layer and the metal layer underneath it, the metal pads being interconnected by metal connection strips for conducting the detection current,wherein the semiconductor layer is completely etched in areas of the semiconductor layer that are neither covered by the metal pads nor by the connection strips, and wherein each metal pad forming an antenna for collecting incident photons of the light beam on an effective collection surface (Σ′) of the light at least twice larger than a physical collection surface (A) of the semiconductor layer covered by said metal pad.

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Patent Owner(s)

Patent OwnerAddress
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)3 RUE MICHEL ANGE PARIS 75016
UNIVERSITE PARIS DIDEROT PARIS 75 RUE THOMAS MANN PARIS F-75013

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yuk Nga Paris, FR 5 22
Madeo, Julien Okinawa, JP 1 0
Sirtori, Carlo Paris, FR 19 365
Todorov, Yanko Montrouge, FR 3 6

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